Samsung Develops 12-Layer 3D TSV DRAM: Up to 24 GB HBM2

Samsung on Monday said that it had developed the industry’s first 12-layer 3D packaging for DRAM products. The technology uses through silicon vias (TSVs) to create high-capacity HBM memory devices for applications that benefit from high memory bandwidth and capacities, such as higher-end graphics, FPGAs, and compute cards. Samsung’s 12-layer DRAM KGSDs (known good stack […]